Flexible DC transmission technology is the future direction of power grid development. IGBT is the most crucial core component within the converter and also one of the most susceptible to failure. Short-circuit failure is its most common fault

necessitating modeling research under multiple physical fields. To characterize the fault state of the flexible DC converter system

a simulation model of the converter system was established

and the voltage and current parameters during converter valve faults were obtained

serving as the conditions for IGBT short-circuit failure. In order to characterize the short-circuit failure of IGBT from the perspective of a single component

combined with the multi physical field coupling theory

a multi physical field coupling model of IGBT considering the temperature effect was established. Through the fault parameters of converter valve

the corresponding parameters of IGBT model are set to simulate short-circuit failures. Finally

the changes of IGBT parameters in the process of short-circuit failure are obtained through the simulation results. The IGBT short-circuit failure model established in this paper has been verified for its effectiveness

providing a theoretical basis for the reliable operation of flexible DC transmission.